ECET 220 ECET220 Week 3 Lab 3 Solution
ECET 220 Week 3 Lab Bipolar Junction Transistor Amplifier Circuit Analysis
Objectives:
Given the schematic diagram of a Voltage-Divider based Common Emitter (CE) Amplifier:
- 1. Use amplifier parameters to evaluate the bipolar junction transistor (BJT) Common Emitter (CE) amplifier characteristics
- 2. Verify the bipolar junction transistor (BJT) voltage divider biased DC parameters through schematic theoretical analysis, simulated circuit analysis and constructed circuit analysis
- 3. Determine the phase angle between the input and output signal of the bipolar junction transistor (BJT) Common Emitter (CE) amplifier
Results:
The theoretical, simulated and constructed circuit characteristics that were calculated or measured were within an acceptable range of ± 10%. For the simulated and constructed circuit AC analysis waveforms, the input and output waveform signals were out of phase by 180° with an average gain of approximately 4. The Q-points of the theoretical, simulated and constructed circuit varied because of the change in the value for IC.
Conclusions:
The BJT common-emitter amplifier is correctly called an inverting amplifier as the input and output voltage waveforms are 180° out of phase and are inverted. As theorized, this transistor configuration has a high voltage and current gain, as demonstrated by the measured characteristics.
